Specification	FFP08S60SNTU

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	32 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2L
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	3.4 V

FFP08S60SN Series

8A, 600V, STEALTH™ II Diode

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology
ON Semiconductor FFP08S60SNTU	150 °C	-65 C	TO-220-2L	32 ns	TO-220-2	600 V	200 mA 500 ns	3.4 V	Through Hole	8 A	100 µA	Standard
ON Semiconductor FFP08S60STU	150 °C	-65 C	TO-220-2	30 ns	TO-220-2	600 V	200 mA 500 ns	2.6 V	Through Hole	8 A	100 µA	Standard

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FFP08S60SN Series

The FFP08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.