Discrete Semiconductor Products

VS-6EWH06FN-M3

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DIODE GEN PURP 600V 6A DPAK

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 6A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-6EWH06FN-M3

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	27 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-252AA (DPAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Speed	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Grade	Qualification
Vishay General Semiconductor - Diodes Division VS-6EWH06FN-M3	600 V	Surface Mount	175 ░C	-65 C	TO-252AA (DPAK)	Standard	2.1 V	27 ns	200 mA 500 ns	6 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	50 µA
Vishay General Semiconductor - Diodes Division VS-6EWH06FNTRL-M3	600 V	Surface Mount	175 ░C	-65 C	TO-252AA (DPAK)	Standard	2.1 V	25 ns	200 mA 500 ns	6 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	50 µA
Vishay General Semiconductor - Diodes Division VS-6EWH06FNTRLHM3	600 V	Surface Mount	175 ░C	-65 C	TO-252AA (DPAK)	Standard	2.1 V	25 ns	200 mA 500 ns	6 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	50 µA	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 6A Surface Mount TO-252AA (DPAK)

Technical documentation and resources