Discrete Semiconductor Products

SI4388DY-T1-GE3

Obsolete

MOSFET 2N-CH 30V 10.7A 8-SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 10.7A 8-SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4388DY-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	11.3 A, 10.7 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	946 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI4388DY-T1-GE3	8-SOIC	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	10.7 A 11.3 A	2 N-Channel (Half Bridge)	946 pF	16 mOhm	8-SOIC	3.9 mm	0.154 in	27 nC	3 V	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 10.7A, 11.3A 3.3W, 3.5W Surface Mount 8-SOIC

Technical documentation and resources