Discrete Semiconductor Products

ACMSP2303T-HF

Active

MOSFET P-CH 30V 2.7A SOT23-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 30V 2.7A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	ACMSP2303T-HF

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	155 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1 W, 2.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Qualification	Rds On (Max) @ Id, Vgs
Comchip Technology ACMSP2303T-HF	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	SC-59 SOT-23-3 TO-236-3	SOT-23-3	2.7 A	22 nC	30 V	1 W 2.3 W	3 V	P-Channel	Automotive	155 pF	Surface Mount	AEC-Q101	190 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3

Technical documentation and resources

No documents available