Discrete Semiconductor Products

NSVMMUN2138LT1G

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PNP BIPOLAR DIGITAL TRANSISTOR (

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Discrete Semiconductor Products

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PNP BIPOLAR DIGITAL TRANSISTOR (

Technical Specifications

Parameters and characteristics for this part

Specification	NSVMMUN2138LT1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	246 mW
Qualification	AEC-Q101
Resistor - Base (R1)	2.2 kOhm
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Grade	Supplier Device Package	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Transistor Type
ON Semiconductor NSVMMUN2138LT1G	160 hFE	SC-59 SOT-23-3 TO-236-3	Automotive	SOT-23-3 (TO-236)	Surface Mount	246 mW	500 nA	100 mA	50 V	AEC-Q101	250 mV	2.2 kOhm	PNP - Pre-Biased
ON Semiconductor MMUN2138LT1G	160 hFE	SC-59 SOT-23-3 TO-236-3		SOT-23-3 (TO-236)	Surface Mount	246 mW	500 nA	100 mA	50 V		250 mV	2.2 kOhm	PNP - Pre-Biased

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General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources