Discrete Semiconductor Products

CSD16321Q5C

Obsolete

MOSFET N-CH 25V 31A/100A 8VSON

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 31A/100A 8VSON

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16321Q5C

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19 nC
Input Capacitance (Ciss) (Max) @ Vds	3100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs [Max]	2.4 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.4 V

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)
Texas Instruments CSD16321Q5C	10 V	-8 V	3100 pF	2.4 mOhm	N-Channel	8 V	3 V	19 nC	8-PowerTDFN	1.4 V	8-VSON-CLIP (5x6)	-55 °C	150 °C	Surface Mount	25 V	MOSFET (Metal Oxide)	3.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)

Technical documentation and resources