Discrete Semiconductor Products

PJMF210N65EC_T0_00601

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650V/ 390MOHM / 10A/ EASY TO DRI

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Discrete Semiconductor Products

Active

650V/ 390MOHM / 10A/ EASY TO DRI

Technical Specifications

Parameters and characteristics for this part

Specification	PJMF210N65EC_T0_00601

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1412 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	32 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	ITO-220AB-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type
Panjit International Inc. PJMF210N65EC_T0_00601	34 nC	10 V	30 V	4 V	32 W	1412 pF	19 A	210 mOhm	MOSFET (Metal Oxide)	Through Hole	150 °C	-55 °C	TO-220-3 Full Pack Isolated Tab	ITO-220AB-F	650 V	N-Channel

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General part information

N-Channel 650 V 19A (Tc) 32W (Tc) Through Hole ITO-220AB-F

Technical documentation and resources