Discrete Semiconductor Products

SISS73DN-T1-GE3

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MOSFET P-CH 150V 4.4A/16.2A PPAK

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Discrete Semiconductor Products

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MOSFET P-CH 150V 4.4A/16.2A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS73DN-T1-GE3

Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	719 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5.1 W, 65.8 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SISS73DN-T1-GE3	5.1 W 65.8 W	20 V	P-Channel	10 V	PowerPAK® 1212-8S	MOSFET (Metal Oxide)	125 mOhm	PowerPAK® 1212-8S	150 V	-55 °C	150 °C	719 pF	Surface Mount	22 nC	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 150 V 4.4A (Ta), 16.2A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources