Discrete Semiconductor Products

EMF18XV6T5

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SMALL SIGNAL BIPOLAR TRANSISTOR

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Discrete Semiconductor Products

Active

SMALL SIGNAL BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	EMF18XV6T5

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	500 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SOT-563
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Resistor - Emitter Base (R2)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Package / Case	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor EMF18XV6T5	500 nA	50 V	SOT-563	47000 Ohms	Surface Mount	100 mA	500 mW	140 MHz	80	47 kOhms	SOT-563 SOT-666	250 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	5323	$ 0.06

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased 50V 100mA 140MHz 500mW Surface Mount SOT-563

Technical documentation and resources

No documents available