Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | IMD14T108 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 82 hFE |
| Frequency - Transition | 250 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-457, SC-74 |
| Power - Max [Max] | 300 mW |
| Resistor - Base (R1) | 220 Ohms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | SMT6 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.45 | |
| Digi-Reel® | 1 | $ 0.45 | ||
| Tape & Reel (TR) | 3000 | $ 0.15 | ||
| 6000 | $ 0.14 | |||
| 9000 | $ 0.13 | |||
| 30000 | $ 0.13 | |||
| 75000 | $ 0.13 | |||
Description
General part information
IMD14 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 250MHz 300mW Surface Mount SMT6
Documents
Technical documentation and resources