Discrete Semiconductor Products

PHP23NQ11T,127

Obsolete

MOSFET N-CH 110V 23A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 110V 23A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP23NQ11T,127

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	110 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	830 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	100 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
Nexperia USA Inc. PHP23NQ11T,127	Through Hole	MOSFET (Metal Oxide)	70 mOhm	10 V	110 V	20 V	N-Channel	22 nC	830 pF	TO-220-3	100 W	23 A	175 °C	-55 °C	TO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 110 V 23A (Tc) 100W (Tc) Through Hole TO-220AB

Technical documentation and resources