Discrete Semiconductor Products

SI7447ADP-T1-E3

Obsolete

MOSFET P-CH 30V 35A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 35A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7447ADP-T1-E3

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	150 nC
Input Capacitance (Ciss) (Max)	4650 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	5.4 W, 83.3 W
Rds On (Max)	6.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	3 V

Part	Rds On (Max)	Package Name	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Gate Charge (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Vgs (Max)	FET Type
Vishay Dale SI7447ADP-T1-E3	6.5 mOhm	PowerPAK® 1212-8	5.4 W 83.3 W	4650 pF	30 V	PowerPAK® 1212-8	MOSFET (Metal Oxide)	150 nC	Surface Mount	-55 °C	150 °C	35 A	10 V	3 V	25 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 30 V 35A (Tc) 5.4W (Ta), 83.3W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available