Discrete Semiconductor Products

SI7447ADP-T1-E3

Obsolete

MOSFET P-CH 30V 35A PPAK 1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 35A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7447ADP-T1-E3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	4650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	83.3 W, 5.4 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Vishay General Semiconductor - Diodes Division SI7447ADP-T1-E3	3 V	PowerPAK® 1212-8	35 A	10 V	150 nC	Surface Mount	25 V	4650 pF	6.5 mOhm	30 V	MOSFET (Metal Oxide)	5.4 W 83.3 W	PowerPAK® 1212-8	-55 °C	150 °C	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 35A (Tc) 5.4W (Ta), 83.3W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available