Specification	KSA643YTA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max)	200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

KSA643 Series

Part	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Transistor Type
ON Semiconductor KSA643CYBU	500 mW	TO-92-3	500 mA	Through Hole	200 nA	150 °C	120	400 mV	TO-226-3 TO-92-3	20 V	PNP
ON Semiconductor KSA643GBU	500 mW	TO-92-3	500 mA	Through Hole	200 nA	150 °C	200	400 mV	TO-226-3 TO-92-3	20 V	PNP
ON Semiconductor KSA643YTA	500 mW	TO-92-3	500 mA	Through Hole	200 nA	150 °C	120	400 mV	TO-226-3 TO-92-3	20 V	PNP
ON Semiconductor KSA643OTA	500 mW	TO-92-3	500 mA	Through Hole	200 nA	150 °C	70 hFE	400 mV	TO-226-3 TO-92-3	20 V	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 20 V 500 mA 500 mW Through Hole TO-92-3

Technical documentation and resources