Discrete Semiconductor Products

SIHA150N60E-GE3

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E SERIES POWER MOSFET THIN-LEAD

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Discrete Semiconductor Products

Active

E SERIES POWER MOSFET THIN-LEAD

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA150N60E-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1514 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	179 W
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHA150N60E-GE3	36 nC	10 V	TO-220 Full Pack	N-Channel	30 V	MOSFET (Metal Oxide)	1514 pF	9 A	600 V	5 V	Through Hole	-55 °C	150 °C	TO-220-3 Full Pack	179 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 9A (Tc) 179W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources