Specification	R1EV58064BTCNBI#B2

Access Time	100 ns
Memory Format	EEPROM
Memory Interface	Parallel
Memory Organization	8K x 8
Memory Size	64 Kbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package	28-TSOP I
Technology	EEPROM
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	10 ms
Write Cycle Time - Word, Page [custom]	10 ms

R1EV58064 Series

EEPROM

Part	Package / Case	Package / Case [y]	Package / Case [y]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Interface	Memory Format	Mounting Type	Memory Organization	Memory Size	Supplier Device Package	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Voltage - Supply [Max]	Voltage - Supply [Min]	Access Time	Package / Case	Package / Case
Renesas Electronics Corporation R1EV58064BSCRBI#B2	28-SOIC	8.4 mm	0.33 in	10 ms	10 ms	Parallel	EEPROM	Surface Mount	8K x 8	64 Kbit	28-SOP	Non-Volatile	85 C	-40 ¯C	EEPROM	5.5 V	2.7 V	100 ns
Renesas Electronics Corporation R1EV58064BDANBI#B2	28-DIP			10 ms	10 ms	Parallel	EEPROM	Through Hole	8K x 8	64 Kbit	28-DIP	Non-Volatile	85 C	-40 ¯C	EEPROM	5.5 V	2.7 V	100 ns	15.24 mm	0.6 in
Renesas Electronics Corporation R1EV58064BTCNBI#B2	28-TSSOP (0.465" 11.80mm Width)			10 ms	10 ms	Parallel	EEPROM	Surface Mount	8K x 8	64 Kbit	28-TSOP I	Non-Volatile	85 C	-40 ¯C	EEPROM	5.5 V	2.7 V	100 ns
Renesas Electronics Corporation R1EV58064BDARBI#B2	28-DIP			10 ms	10 ms	Parallel	EEPROM	Through Hole	8K x 8	64 Kbit	28-DIP	Non-Volatile	85 C	-40 ¯C	EEPROM	5.5 V	2.7 V	100 ns	15.24 mm	0.6 in
Renesas Electronics Corporation R1EV58064BTCRBI#B2	28-TSSOP (0.465" 11.80mm Width)			10 ms	10 ms	Parallel	EEPROM	Surface Mount	8K x 8	64 Kbit	28-TSOP I	Non-Volatile	85 C	-40 ¯C	EEPROM	5.5 V	2.7 V	100 ns
Renesas Electronics Corporation R1EV58064BSCNBI#B2	28-SOIC	8.4 mm	0.33 in	10 ms	10 ms	Parallel	EEPROM	Surface Mount	8K x 8	64 Kbit	28-SOP	Non-Volatile	85 C	-40 ¯C	EEPROM	5.5 V	2.7 V	100 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

R1EV58064 Series

Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

Documents

Technical documentation and resources

R1EV58064BxxN Series R1EV58064BxxR Series Datasheet

Datasheet