
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4350SSJ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2.7 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 300 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power - Max [Max] | 750 mW |
| Supplier Device Package | 8-SO |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 340 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
PBSS4350 Series
NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources