Discrete Semiconductor Products

SIL2300-TP

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MOSFET 2N-CH 20V 4A SOT23-6L

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Discrete Semiconductor Products

Active

MOSFET 2N-CH 20V 4A SOT23-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIL2300-TP

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	4.2 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Configuration	Technology	Drain to Source Voltage (Vdss)	Power - Max [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Micro Commercial Components SIL2300-TP	620 pF	1 V	25 mOhm	4.2 nC	4 A	Surface Mount	SOT-23-6	2 N-Channel (Dual) Common Drain	MOSFET (Metal Oxide)	20 V	1.25 W	SOT-23-6L	-55 °C	150 °C
Micro Commercial Components SIL2300A-TP		1 V	18 mOhm		7 A	Surface Mount	SOT-23-6	2 N-Channel (Dual) Common Drain		20 V	1.5 W	SOT-23-6L	-55 °C	150 °C	9.2 nC

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General part information

Mosfet Array 20V 4A (Tc) 1.25W (Ta) Surface Mount SOT-23-6L

Technical documentation and resources