Discrete Semiconductor Products

IRFSL31N20DTRL

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MOSFET N-CH 200V 31A I2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 200V 31A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL31N20DTRL

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	2370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	200 W, 3.1 W
Rds On (Max) @ Id, Vgs	82 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division IRFSL31N20DTRL	MOSFET (Metal Oxide)	10 V	I2PAK TO-262-3 Long Leads TO-262AA	I2PAK	110 nC	30 V	Through Hole	82 mOhm	5.5 V	-55 °C	175 ░C	200 V	N-Channel	31 A	3.1 W 200 W	2370 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole I2PAK

Technical documentation and resources