
Deep-Dive with AI
Search across all available documentation for this part.

Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | KSA910YSHTA |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 50 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 hFE |
| Frequency - Transition | 100 MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3 Long Body, Formed Leads, TO-226-3 |
| Power - Max [Max] | 800 mW |
| Supplier Device Package | TO-92-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 800 mV |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
KSA910 Series
Bipolar (BJT) Transistor PNP 150 V 50 mA 100MHz 800 mW Through Hole TO-92-3
Documents
Technical documentation and resources
No documents available