Discrete Semiconductor Products

IPS13N03LA G

Obsolete

MOSFET N-CH 25V 30A TO251-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 30A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS13N03LA G

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1043 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	46 W
Rds On (Max) @ Id, Vgs	12.8 mOhm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	FET Type	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
INFINEON IPS13N03LA G	4.5 V 10 V	MOSFET (Metal Oxide)	25 V	PG-TO251-3-11	46 W	N-Channel	TO-251-3 Stub Leads IPAK	Through Hole	1043 pF	20 V	8.3 nC	30 A	175 °C	-55 °C	12.8 mOhm	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 25 V 30A (Tc) 46W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources