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PG-TSON-8-3
Discrete Semiconductor Products

BSC430N25NSFDATMA1

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INFINEON

OPTIMOS™ FD N-CHANNEL POWER MOSFET 250 V ; SUPERSO8 5X6 PACKAGE; 43 MOHM; FAST DIODE

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PG-TSON-8-3
Discrete Semiconductor Products

BSC430N25NSFDATMA1

Active
INFINEON

OPTIMOS™ FD N-CHANNEL POWER MOSFET 250 V ; SUPERSO8 5X6 PACKAGE; 43 MOHM; FAST DIODE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC430N25NSFDATMA1
Current - Continuous Drain (Id) @ 25°C36 A
Drain to Source Voltage (Vdss)250 V
FET TypeN-Channel
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TSON-8-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.69
10$ 3.81
100$ 2.74
500$ 2.28
1000$ 2.25
Digi-Reel® 1$ 5.69
10$ 3.81
100$ 2.74
500$ 2.28
1000$ 2.25
N/A 5102$ 5.30
Tape & Reel (TR) 5000$ 2.25

Description

General part information

BSC430 Series

Infineon'sOptiMOS™ MOSFETs in SuperSO8package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Documents

Technical documentation and resources