Discrete Semiconductor Products

FDS8817NZ

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET 30V, 15A, 7.0MΩ

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-751EB-SOIC8 +1

Discrete Semiconductor Products

FDS8817NZ

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET 30V, 15A, 7.0MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS8817NZ

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDS8817NZ Series

N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDS8817NZ	20 V	30 V	8-SOIC	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	2400 pF	7 mOhm	MOSFET (Metal Oxide)	N-Channel	3 V	15 A	Surface Mount	-55 °C	150 °C	2.5 W	45 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS8817NZ Series

This N–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.