Discrete Semiconductor Products

BSP125H6327XTSA1

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MOSFET, N-CH, 600V, 0.12A, SOT-223 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 600V, 0.12A, SOT-223 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BSP125H6327XTSA1

Current - Continuous Drain (Id) @ 25°C	120 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	45 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Grade	FET Type	Qualification	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
INFINEON BSP125H6327XTSA1	TO-261-4 TO-261AA	150 °C	-55 °C	20 V	45 Ohm	Automotive	N-Channel	AEC-Q101	MOSFET (Metal Oxide)	120 mA	150 pF	1.8 W	600 V	2.3 V	4.5 V 10 V	Surface Mount	6.6 nC	PG-SOT223-4
INFINEON BSP125H6433XTMA1	TO-261-4 TO-261AA	150 °C	-55 °C	20 V		Automotive	N-Channel	AEC-Q101	MOSFET (Metal Oxide)	120 mA	150 pF	1.8 W	600 V	2.3 V	4.5 V 10 V	Surface Mount	6.6 nC	PG-SOT223-4

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources