Specification	PSMN2R8-40YSDX

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4507 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max) [Max]	147 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMN2R8-40YSD Series

N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	FET Feature	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Vgs(th) (Max) @ Id
Nexperia USA Inc. PSMN2R8-40YSDX	20 V	10 V	147 W	LFPAK56 Power-SO8	175 °C	-55 °C	2.8 mOhm	SC-100 SOT-669	4507 pF	40 V	160 A	MOSFET (Metal Oxide)	Schottky Diode (Body)	62 nC	N-Channel	Surface Mount	3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3741	$ 2.69

Description

General part information

PSMN2R8-40YSD Series

160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.