Discrete Semiconductor Products

IPB50N12S3L15ATMA1

Obsolete

IPB50N12S3L-15 IS AN AUTOMOTIVE MOSFET OFFERING 120V, N-CH, 15.4 MΩ MAX, D2PAK, OPTIMOS™-T, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

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Discrete Semiconductor Products

Obsolete

IPB50N12S3L-15 IS AN AUTOMOTIVE MOSFET OFFERING 120V, N-CH, 15.4 MΩ MAX, D2PAK, OPTIMOS™-T, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Technical Specifications

Parameters and characteristics for this part

Specification	IPB50N12S3L15ATMA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	100 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15.7 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Qualification	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Grade	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPB50N12S3L15ATMA1	4.5 V 10 V	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.4 V	57 nC	PG-TO263-3-2	50 A	Surface Mount	MOSFET (Metal Oxide)	15.7 mOhm	AEC-Q101	100 W	120 V	N-Channel	Automotive	20 V	4180 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 120 V 50A (Tc) 100W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources