Discrete Semiconductor Products

IDWD15G120C5XKSA1

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SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 1.2 KV, 49 A, 82 NC, TO-247

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Discrete Semiconductor Products

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SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 1.2 KV, 49 A, 82 NC, TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	IDWD15G120C5XKSA1

Capacitance @ Vr, F	1050 pF
Current - Average Rectified (Io)	49 A
Current - Reverse Leakage @ Vr	124 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.65 V

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
INFINEON IDWD15G120C5XKSA1	0 ns	1.2 kV	1050 pF	SiC (Silicon Carbide) Schottky	PG-TO247-2	TO-247-2	1.65 V	Through Hole	500 mA	49 A	124 µA	175 ░C	-55 °C

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General part information

Diode 1200 V 49A Through Hole PG-TO247-2

Technical documentation and resources