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Technical Specifications
Parameters and characteristics for this part
| Specification | PMDPB30XNAX |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 12 A, 4.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 619 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max | 640 mW, 11 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 4.5 A, 4.5 V |
| Rds On (Max) @ Id, Vgs [Max] | 34 mOhm |
| Supplier Device Package | 6-HUSON (2x2) |
| Technology | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 141 | $ 0.86 | |
Description
General part information
PMDPB30XNA Series
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources