Discrete Semiconductor Products

IPB024N08NF2SATMA1

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INFINEON'S STRONGIRFET™ 2 POWER MOSFET 80 V FEATURES LOW RDS(ON) OF 2.4 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.

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DocumentsTechnical Data Sheet EN Datasheet

Discrete Semiconductor Products

IPB024N08NF2SATMA1

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INFINEON

INFINEON'S STRONGIRFET™ 2 POWER MOSFET 80 V FEATURES LOW RDS(ON) OF 2.4 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB024N08NF2SATMA1

Current - Continuous Drain (Id) @ 25°C	107 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	133 nC
Input Capacitance (Ciss) (Max) @ Vds	6200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

IPB024N Series

Part	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology
INFINEON IPB024N08NF2SATMA1	Surface Mount	150 W	6 V 10 V	3.8 V	107 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	80 V	6200 pF	133 nC	2.4 mOhm	N-Channel	175 °C	-55 °C	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.70
		10	$ 2.15
		100	$ 1.69
	Digi-Reel®	1	$ 3.70
		10	$ 2.15
		100	$ 1.69
	N/A	210	$ 4.03
	Tape & Reel (TR)	800	$ 1.39
		1600	$ 1.37
Newark	Each (Supplied on Cut Tape)	1	$ 4.41
		10	$ 3.08
		25	$ 2.90
		50	$ 2.72
		100	$ 2.54
		250	$ 2.34
		500	$ 2.14
		1600	$ 2.09

Description

General part information

IPB024N Series

Infineon'sStrongIRFET™ 2power MOSFET 80 V features low RDS(on)of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet