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SOT 23
Discrete Semiconductor Products

SI2333A-TP

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SOT 23
Discrete Semiconductor Products

SI2333A-TP

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2333A-TP
Current - Continuous Drain (Id) @ 25°C5.6 A
Drain to Source Voltage (Vdss)15 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]740 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]1.1 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageSOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3000$ 0.07
3000$ 0.07
N/A 0$ 0.07
0$ 0.07

Description

General part information

SI2333 Series

P-Channel 15 V 5.6A 1.1W Surface Mount SOT-23

Documents

Technical documentation and resources