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GE17042CCA3
Discrete Semiconductor Products

GE17042CCA3

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GE Aerospace

MOSFET 2N-CH 1700V 425A MODULE

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GE17042CCA3
Discrete Semiconductor Products

GE17042CCA3

Active
GE Aerospace

MOSFET 2N-CH 1700V 425A MODULE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGE17042CCA3
Configuration2 N-Channel
Current - Continuous Drain (Id) @ 25°C425 A
Drain to Source Voltage (Vdss)1.7 kV
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Qg) (Max) @ Vgs [Max]1207 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]29100 pF
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseModule
Power - Max [Max]1250 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.45 mOhm
Supplier Device PackageModule
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 12$ 2695.00

Description

General part information

GE17042CCA3

MOSFET 2N-CH 1700V 425A MODULE

Documents

Technical documentation and resources