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GE17042CCA3
Discrete Semiconductor Products

GE17042CCA3

Active
GE Aerospace

MOSFET 2N-CH 1700V 425A MODULE

GE17042CCA3
Discrete Semiconductor Products

GE17042CCA3

Active
GE Aerospace

MOSFET 2N-CH 1700V 425A MODULE

Technical Specifications

Parameters and characteristics for this part

SpecificationGE17042CCA3
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id) (Tc)425 A
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Max)1207 nC
Input Capacitance (Ciss) (Max)29100 pF
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseModule
Package NameModule
Power - Max1250 W
QualificationAEC-Q101
Rds On (Max)4.45 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 1$ 2695.00<4d

CAD

3D models and CAD resources for this part

Description

General part information

GE17042CCA3

MOSFET 2N-CH 1700V 425A MODULE

Documents

Technical documentation and resources