Discrete Semiconductor Products

SIHG14N50D-E3

LTB

MOSFET N-CH 500V 14A TO247AC

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 14A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG14N50D-E3

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds	1144 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHG14N50D-E3	-55 °C	150 °C	208 W	30 V	1144 pF	MOSFET (Metal Oxide)	TO-247AC	TO-247-3	Through Hole	400 mOhm	N-Channel	5 V	500 V	58 nC	14 A	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 1.91

General part information

N-Channel 500 V 14A (Tc) 208W (Tc) Through Hole TO-247AC

Technical documentation and resources