Discrete Semiconductor Products

SIR401DP-T1-GE3

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MOSFET P-CH 20V 50A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 20V 50A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR401DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	310 nC
Input Capacitance (Ciss) (Max) @ Vds	9080 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	39 W, 5 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIR401DP-T1-GE3	12 V	20 V	50 A	Surface Mount	310 nC	P-Channel	3.2 mOhm	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8	-55 °C	150 °C	10 V	2.5 V	9080 pF	1.5 V	5 W 39 W

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General part information

P-Channel 20 V 50A (Tc) 5W (Ta), 39W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources