Discrete Semiconductor Products

TPC6503(TE85L,F,M)

Obsolete

BIPOLAR TRANSISTORS - BJT NPN HFE 400 TO 1000 VCE 0.12V TF 45NS

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTORS - BJT NPN HFE 400 TO 1000 VCE 0.12V TF 45NS

Technical Specifications

Parameters and characteristics for this part

Specification	TPC6503(TE85L,F,M)

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	400
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power - Max [Max]	1.6 W
Supplier Device Package	VS-6
Supplier Device Package [x]	2.9
Supplier Device Package [y]	2.8
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	120 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type
Toshiba Semiconductor and Storage TPC6503(TE85L,F,M)	100 nA	150 °C	1.6 W	400	NPN	SOT-23-6 Thin TSOT-23-6	120 mV	2.8	VS-6	2.9	30 V	1.5 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

BIPOLAR TRANSISTORS - BJT NPN HFE 400 TO 1000 VCE 0.12V TF 45NS

Technical documentation and resources

No documents available