Discrete Semiconductor Products

MCP75N10Y-BP

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N-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MCP75N10Y-BP

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2429 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	205 W
Rds On (Max) @ Id, Vgs	8.6 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
MCC (Micro Commercial Components) MCP75N10Y-BP	N-Channel	75 A	TO-220-3	20 V	2429 pF	TO-220AB (H)	4 V	Through Hole	MOSFET (Metal Oxide)	100 V	150 °C	-55 °C	8.6 mOhm	32 nC	6 V 10 V	205 W
MCC (Micro Commercial Components) MCP75N10Y-BP	N-Channel	75 A	TO-220-3	20 V	2429 pF	TO-220AB (H)	4 V	Through Hole	MOSFET (Metal Oxide)	100 V	150 °C	-55 °C	8.6 mOhm	32 nC	6 V 10 V	205 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 75A 205W Through Hole TO-220AB (H)

Technical documentation and resources