Discrete Semiconductor Products

BC556TFR

Obsolete

ON Semiconductor

TRANS PNP 65V 0.1A TO92-3

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Discrete Semiconductor Products

BC556TFR

Obsolete

ON Semiconductor

TRANS PNP 65V 0.1A TO92-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC556TFR

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max)	65 V

BC556B(LEGACY%20FAIRCHILD) Series

100 mA, 65 V PNP Bipolar Junction Transistor - Epitaxial Silicon

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type	Frequency - Transition	Package / Case	Power - Max [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor BC556B	650 mV	100 nA	TO-92	TO-226	-55 °C	150 °C	65 V	PNP	100 mA	Through Hole	280 MHz	TO-226-3 TO-92-3 Long Body	625 mW
ON Semiconductor BC556BTFR	650 mV	15 nA	TO-92-3				65 V	PNP	100 mA	Through Hole	150 MHz	TO-226-3 TO-92-3	500 mW	150 °C	200
ON Semiconductor BC556BTA	650 mV	15 nA	TO-92-3				65 V	PNP	100 mA	Through Hole	150 MHz	TO-226-3 TO-92-3	500 mW	150 °C	200
ON Semiconductor BC556BZL1G	650 mV	100 nA	TO-92	TO-226	-55 °C	150 °C	65 V	PNP	100 mA	Through Hole	280 MHz	Formed Leads TO-226-3 TO-92-3 Long Body	625 mW
ON Semiconductor BC556_J18Z	650 mV	15 nA	TO-92-3				65 V	PNP	100 mA	Through Hole	150 MHz	TO-226-3 TO-92-3	500 mW	150 °C	110
ON Semiconductor BC556TFR	650 mV	15 nA	TO-92-3				65 V	PNP	100 mA	Through Hole	150 MHz	TO-226-3 TO-92-3	500 mW	150 °C	110
ON Semiconductor BC556BTAR	650 mV	15 nA	TO-92-3				65 V	PNP	100 mA	Through Hole	150 MHz	TO-226-3 TO-92-3	500 mW	150 °C	200
ON Semiconductor BC556	650 mV	15 nA	TO-92-3				65 V	PNP	100 mA	Through Hole	150 MHz	TO-226-3 TO-92-3	500 mW	150 °C	110
ON Semiconductor BC556BTFR	650 mV	15 nA	TO-92-3				65 V	PNP	100 mA	Through Hole	150 MHz	TO-226-3 TO-92-3	500 mW	150 °C	200
ON Semiconductor BC556BTA	650 mV	15 nA	TO-92-3				65 V	PNP	100 mA	Through Hole	150 MHz	TO-226-3 TO-92-3	500 mW	150 °C	200

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BC556B(LEGACY%20FAIRCHILD) Series

The 100 mA, 65 V PNP Bipolar Junction Transistor is designed for use in amplifier and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources