Specification	FGH50N6S2D

Current - Collector (Ic) (Max) [Max]	75 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	70 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	463 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	TO-247-3
Switching Energy	260 µJ, 250 µJ
Td (on/off) @ 25°C	55 ns
Td (on/off) @ 25°C	13 ns
Test Condition	390 V, 3 Ohm, 30 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

FGH50T65SQD-F155 Series

IGBT, 650 V, 50A Field Stop 4 Trench

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Power - Max [Max]	Mounting Type	Package / Case	Test Condition	Gate Charge	IGBT Type	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor FGH50N6S2D	TO-247-3	-55 °C	150 °C	2.7 V	600 V	250 µJ 260 µJ	240 A	55 ns	13 ns	75 A	55 ns	463 W	Through Hole	TO-247-3	3 Ohm 15 V 30 A 390 V	70 nC
ON Semiconductor FGH50T65UPD	TO-247-3	-55 °C	175 ░C	2.3 V		2.7 mJ 740 µJ	150 A	160 ns	32 ns	100 A	53 ns	340 W	Through Hole	TO-247-3	6 Ohm 15 V 50 A 400 V	230 nC	Trench Field Stop	650 V
ON Semiconductor FGH50T65SQD-F155	TO-247-3	-55 °C	175 ░C	2.1 V		45 µJ 180 µJ	200 A		22 ns 105 ns	100 A	31 ns	268 W	Through Hole	TO-247-3		99 nC	Trench Field Stop	650 V
ON Semiconductor FGH50N6S2D	TO-247	-55 °C	150 °C	2.7 V	600 V	250 µJ 260 µJ	240 A	55 ns	13 ns	75 A	55 ns	463 W	Through Hole	TO-247-3	3 Ohm 15 V 30 A 390 V	70 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	29	$ 10.64
		29	$ 10.64

Description

General part information

FGH50T65SQD-F155 Series

The FGH50N6S2D is a low gate charge, low plateau voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction (PFC) circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392