Discrete Semiconductor Products

SI7421DN-T1-GE3

LTB

MOSFET P-CH 30V 6.4A PPAK 1212-8

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Discrete Semiconductor Products

LTB

MOSFET P-CH 30V 6.4A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7421DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	6.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	40 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Package / Case	Vgs(th) (Max)	Package Name	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Mounting Type	Gate Charge (Max)	Technology	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SI7421DN-T1-GE3	-55 °C	150 °C	25 mOhm	PowerPAK® 1212-8	3 V	PowerPAK® 1212-8	20 V	30 V	6.4 A	1.5 W	Surface Mount	40 nC	MOSFET (Metal Oxide)	P-Channel	10 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 30 V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources