Specification	SSM6K341NU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SSM6K341NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-1220(UDFN6B)

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6K341NU,LF	2.5 V	4 V	10 V	6 A	2.5 W	150 °C	Surface Mount	9.3 nC	20 V	6-UDFNB (2x2)	60 V	MOSFET (Metal Oxide)	N-Channel	36 mOhm	550 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7754	$ 0.56

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-1220(UDFN6B)

Technical documentation and resources