Discrete Semiconductor Products

CMLDM3757 TR PBFREE

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MOSFET N/P-CH 20V SOT563

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 20V SOT563

Technical Specifications

Parameters and characteristics for this part

Specification	CMLDM3757 TR PBFREE

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	540 mA, 430 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	FET Feature	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Technology	Rds On (Max) @ Id, Vgs
Central Semiconductor Corp CMLDM3757 TR PBFREE	150 pF	SOT-563	20 V	350 mW	150 °C	-65 °C	1.58 nC	N and P-Channel	430 mA 540 mA	Logic Level Gate	Surface Mount	1 V	SOT-563 SOT-666	MOSFET (Metal Oxide)	550 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 540mA, 430mA 350mW Surface Mount SOT-563

Technical documentation and resources