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INFINFBF799
Discrete Semiconductor Products

BC856AE6327

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INFINEON

BIPOLAR GEN PURPOSE TRANSISTOR

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INFINFBF799
Discrete Semiconductor Products

BC856AE6327

Active
INFINEON

BIPOLAR GEN PURPOSE TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBC856AE6327
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]125
Frequency - Transition250 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]330 mW
QualificationAEC-Q101
Supplier Device PackagePG-SOT23-3-1
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic0.65 V
Voltage - Collector Emitter Breakdown (Max) [Max]65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 13172$ 0.02
N/A 48000$ 0.03

Description

General part information

BC856 Series

Bipolar (BJT) Transistor PNP 65 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23-3-1

Documents

Technical documentation and resources

No documents available