Discrete Semiconductor Products

MPS3708 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 30VCBO 30VCEO 6.0VEBO 1.0MA

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 30VCEO 6.0VEBO 1.0MA

Technical Specifications

Parameters and characteristics for this part

Specification	MPS3708 TIN/LEAD

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	45 hFE
Mounting Type	Through Hole
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Package / Case	Supplier Device Package	Mounting Type
Central Semiconductor Corp MPS3708 TIN/LEAD	30 V	100 nA	NPN	45 hFE	TO-226AA	TO-226-3 TO-92-3	TO-92-3	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.19
Mouser	N/A	5000	$ 0.18
		10000	$ 0.17

General part information

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 30VCEO 6.0VEBO 1.0MA

Technical documentation and resources