Specification	NTTFS5116PLTWG

Current - Continuous Drain (Id) @ 25°C	5.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1258 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	40 W, 3.2 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTTFS5116PL Series

Single P-Channel Power MOSFET -60V, -20A, 52mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTTFS5116PLTAG	25 nC	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	MOSFET (Metal Oxide)	3.2 W 40 W	20 V	1258 pF	60 V	P-Channel	-55 °C	175 ░C	8-PowerWDFN	4.5 V 10 V	3 V	5.7 A
ON Semiconductor NTTFS5116PLTWG	25 nC	Surface Mount	8-WDFN (3.3x3.3)	52 mOhm	MOSFET (Metal Oxide)	3.2 W 40 W	20 V	1258 pF	60 V	P-Channel	-55 °C	175 ░C	8-PowerWDFN	4.5 V 10 V	3 V	5.7 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET−60 V, −20 A, 52 mΩ

Technical documentation and resources