Discrete Semiconductor Products

DIT100N10

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MOSFETS MOSFET, TO-220AB, 100V, 100A, 175C, N

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Discrete Semiconductor Products

Active

MOSFETS MOSFET, TO-220AB, 100V, 100A, 175C, N

Technical Specifications

Parameters and characteristics for this part

Specification	DIT100N10

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	85 nC
Input Capacitance (Ciss) (Max) @ Vds	4800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Technology	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Diotec Semiconductor DIT100N10	10 V	200 W	20 V	MOSFET (Metal Oxide)	TO-220-3	N-Channel	100 A	4800 pF	175 °C	-55 °C	85 nC	Through Hole	4 V	TO-220AB	100 V	13 mOhm

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General part information

MOSFETS MOSFET, TO-220AB, 100V, 100A, 175C, N

Technical documentation and resources