Discrete Semiconductor Products
GANE190-700BBAZ
ActiveNexperia USA Inc.
700 V, 190 MOHM GALLIUM NITRIDE (GAN) FET IN DPAK PACKAGE
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Discrete Semiconductor Products
GANE190-700BBAZ
ActiveNexperia USA Inc.
700 V, 190 MOHM GALLIUM NITRIDE (GAN) FET IN DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | GANE190-700BBAZ |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 37 | $ 4.54 | |
Description
General part information
GANE190-700BBA Series
The GANE190-700BBA is a general purpose 700 V, 190 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance.
Documents
Technical documentation and resources