Discrete Semiconductor Products

IRFH4257DTRPBF

Active

MOSFET 2N-CH 25V 25A PQFN

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 25V 25A PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	IRFH4257DTRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1321 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	25 W, 28 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	Dual PQFN (5x4)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power - Max	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Configuration	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs
INFINEON IRFH4257DTRPBF	150 °C	-55 °C	8-PowerVDFN	25 A	25 V	15 nC	Surface Mount	25 W 28 W	2.1 V	1321 pF	Logic Level Gate	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Dual PQFN (5x4)	3.4 mOhm
INFINEON IRFH4257DTRPBF	150 °C	-55 °C	8-PowerVDFN	25 A	25 V	15 nC	Surface Mount	25 W 28 W	2.1 V	1321 pF	Logic Level Gate	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Dual PQFN (5x4)	3.4 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 25V 25A 25W, 28W Surface Mount Dual PQFN (5x4)

Technical documentation and resources