Specification	FDPF2710T

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	101 nC
Input Capacitance (Ciss) (Max) @ Vds	7280 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	62.5 W
Rds On (Max) @ Id, Vgs	42.5 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDPF2710T Series

N-Channel PowerTrench<sup>®</sup> MOSFET 250V, 25A, 42.5mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Technology
ON Semiconductor FDPF2710T	10 V	25 A	42.5 mOhm	101 nC	TO-220F-3	Through Hole	5 V	30 V	N-Channel	7280 pF	62.5 W	-55 °C	150 °C	TO-220-3 Full Pack	250 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.01
		10	$ 4.03
		100	$ 2.91
		500	$ 2.43
		1000	$ 2.42
Newark	Each	500	$ 2.71
		500	$ 2.71
ON Semiconductor	N/A	1	$ 2.22

Description

General part information

FDPF2710T Series

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221AT-TO-220 Fullpack, 3-Lead / TO-220F-3FG

Package Drawing

Product Change Notice EN

Datasheet