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8-Power TDFN
Discrete Semiconductor Products

BSC0302LSATMA1

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INFINEON

OPTIMOS™ PD N-CHANNEL POWER MOSFET 120 V ; SUPERSO8 PACKAGE; 8 MOHM;

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8-Power TDFN
Discrete Semiconductor Products

BSC0302LSATMA1

Active
INFINEON

OPTIMOS™ PD N-CHANNEL POWER MOSFET 120 V ; SUPERSO8 PACKAGE; 8 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0302LSATMA1
Current - Continuous Drain (Id) @ 25°C12 A, 99 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs79 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]7400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)156 W
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackagePG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.87
10$ 1.86
100$ 1.28
500$ 1.04
1000$ 0.96
2000$ 0.89
Digi-Reel® 1$ 2.87
10$ 1.86
100$ 1.28
500$ 1.04
1000$ 0.96
2000$ 0.89
N/A 2$ 2.85
Tape & Reel (TR) 5000$ 0.89
NewarkEach (Supplied on Cut Tape) 1$ 2.46
10$ 1.83
25$ 1.71
50$ 1.58
100$ 1.46
250$ 1.34
500$ 1.22
1000$ 1.04

Description

General part information

BSC0302 Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages. Click here to viewfull portfolio.