Specification	SSM6P15FE(TE85L,F)

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	9.1 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.7 V

SSM6P15FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-563(ES6)

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Feature	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature	Configuration	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6P15FE(TE85L,F)	Surface Mount	100 mA	Logic Level Gate	ES6	MOSFET (Metal Oxide)	30 V	12 Ohm	9.1 pF	SOT-563 SOT-666	150 °C	2 P-Channel (Dual)	1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-563(ES6)

Technical documentation and resources