
Deep-Dive with AI
Search across all available documentation for this part.
Documents2N4403-AP | Datasheet

Deep-Dive with AI
Documents2N4403-AP | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N4403-AP |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power - Max [Max] | 0.6 W |
| Supplier Device Package | TO-92 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 750 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.44 | |
| 1 | $ 0.44 | |||
| 10 | $ 0.34 | |||
| 10 | $ 0.34 | |||
| 100 | $ 0.20 | |||
| 100 | $ 0.20 | |||
| N/A | 0 | $ 0.00 | ||
| 0 | $ 0.00 | |||
Description
General part information
2N4403 Series
Bipolar (BJT) Transistor PNP 40 V 200MHz 600 mW Through Hole TO-92
Documents
Technical documentation and resources