Discrete Semiconductor Products

BC858BW_R1_00001

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BIPOLAR TRANSISTORS - BJT PNPGENERALPURPOSETRANSISTORS VCE-30V IC-100MA SOT-323

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNPGENERALPURPOSETRANSISTORS VCE-30V IC-100MA SOT-323

Technical Specifications

Parameters and characteristics for this part

Specification	BC858BW_R1_00001

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-323, SC-70
Power - Max [Max]	250 mW
Supplier Device Package	SOT-323
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	0.65 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Transistor Type
Panjit International Inc. BC858BW_R1_00001	SOT-323	200	100 mA	Surface Mount	15 nA	250 mW	200 MHz	0.65 V	30 V	150 °C	-55 °C	SC-70 SOT-323	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.02
Mouser	N/A	120000	$ 0.02

General part information

BIPOLAR TRANSISTORS - BJT PNPGENERALPURPOSETRANSISTORS VCE-30V IC-100MA SOT-323

Technical documentation and resources